Electronic Resource
s.l. ; Stafa-Zurich, Switzerland
Solid state phenomena
Vol. 108-109 (Dec. 2005), p. 11-16
ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Thermal treatments to enhance precipitation like RTA, ramp anneal and argon anneal were performed on low oxygen 300 mm wafers without vacancy or interstitial agglomerates (“so called” defect-free material). Best results were achieved using high temperature argon anneal leading to a homogenous BMD and denuded zone formation. Furthermore the getter efficiency was positively tested by intentional Ni-contamination. Concepts to overcome the slip danger like improved support geometries and nitrogen codoping were also evaluated and are seen to be beneficial
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/21/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.108-109.11.pdf
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