ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
A series of Cu1-xAlS2 (x = 0 ~ 0.08) bulk samples were synthesized by spark plasma sintering.The electrical and optical properties were investigated. P-type conductions for all samples wereconfirmed by both positive Seebeck coefficient and Hall coefficient. Bulk undoped CuAlS2 had a highconductivity of about 0.9 S/cm with a large band gap of 3.4 eV at room temperature. For vacancy-dopedin Cu site, the carrier concentration was highly enhanced, reaching 1.7 × 1019 cm-3 for 8 mol% dopedsample, and without decreasing the bang gap. The introduction of vacancies destroys the continuity ofCu-S network, which decreases the Hall mobility
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.368-372.666.pdf