ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Grinding of single crystal silicon may be achieved by two modes of material removal:ductile mode and brittle mode. Knowing of the brittle to ductile transition point at which the grindingprocess changes from the brittle mode to ductile mode is critically important for the realization ofductile mode grinding. This paper uses a new single grain diamond grinding method developedrecently by the authors to investigate the brittle to ductile transition during grinding of single crystalsilicon in all around. The results indicate that there exist four stages of brittle to ductile transition asthe depth of cut is reduced: firstly, the surface cracks outside the grinding groove disappeared,secondly[removed info]cracks on the bottom of the groove disappeared, then the lateral cracks ceased in thesubsurface region, and finally the median crack is suppressed beneath the grooves. It is not until thedepth of cut reaches the last transition point that a crack-free groove can be produced, therefore, thelast transition stage is decisive. The critical depth of cut delineating the brittle to ductile transitionpoint derived based on this criterion is 40 nanometers, which is much lower than that based on surfacecracks
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/52/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.329.433.pdf
