ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
The current trends of research and development work in ion-beam microlithography are examined with particular emphasis on the choice of ion sources and the beam parameters. The common approach with duoplasmatron-type ion sources for projection ion-beam lithography is revisited, and the suitability of H− beams is examined. The beam brightness and energy spread, which constitute the figure of merit of a beam, appear to be better in the case of H− beams. From a surface plasma source type discharge operating under stable condition, H− beams with an emission current density of ∼1–5 A/cm2 and a normalized brightness of ∼7×1012 A/(m rad)2 can be extracted. Several key issues of an ion-projection lithography device, such as the ion source parameters, beam optics, and thermal load are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1144989
