ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
We have constructed a scanning tunneling microscope with simultaneous light collection capabilities in order to investigate the opto-electronic properties of semiconductors. The microscope has in situ sample cleavage mechanism for cross-sectional sample. In order to reach low temperature (4 K), we used a specially designed cryostat. The efficiency of light collection generated in the tip-surface junction was greatly improved by use of a small parabolic mirror with the tip located at its focal point. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1150118