Electronic Resource
College Park, Md.
:
American Institute of Physics (AIP)
The Journal of Chemical Physics
89 (1988), S. 4042-4047
ISSN:
1089-7690
Source:
AIP Digital Archive
Topics:
Physics
,
Chemistry and Pharmacology
Notes:
Absolute cross sections are measured for electron impact ionization and dissociative ionization of SiF2 from threshold to 200 eV. A fast (3 keV) neutral beam of SiF2 is formed by charge transfer neutralization of SiF+2 with Xe; it is primarily in the ground electronic state with about 10% in the metastable first excited electronic state (a˜ 3B1). The absolute cross section for ionization of the ground state by 70 eV electrons to the parent SiF+2 is 1.38±0.18 A(ring)2. Formation of SiF+ is the major process with a cross section at 70 eV of 2.32±0.30 A(ring)2. The cross section at 70 eV for formation of the Si fragment ion is 0.48±0.08 A(ring)2. Ion pair production contributes a significant fraction of the positively charged fragment ions.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.454837
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