ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Electrical transport measurements between 300 and 1.5 K were made on two Pb0.75Sn0.25Te films doped approximately 0.5 at. % indium. The Hall mobility, Hall coefficient, and resistivity display an unusual temperature dependence relative to those of undoped PbSnTe which suggest a phase transition at approximately 18 K. These samples also exhibit high photosensitivity below 21 K where slowly relaxing and persistent photoconductivity was observed. Time constants for the photoconductive relaxation were found for temperatures between 8 and 19 K. The application of a magnetic field during sample cooldown had a large effect on the zero-field resistivity of the sample at 4.2 K.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.334562