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In/Pt ohmic contacts to GaAs (1985)

Marvin, Dean C. ; Ives, Neil A. ; Leung, Martin S.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 58 (1985), S. 2659-2661

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Graded heterojunction InGaAs ohmic contacts to GaAs have been prepared which show improved electrical and mechanical properties. The improvements result from the use of a thin Pt layer between the In layer and the substrate which controls the reaction of the In and the GaAs. Evidence is also offered that the InAs heterojunction regions are epitaxial.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.335899

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