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Silicon autocompensation in GaAs grown by molecular-beam epitaxy (1986)

Ballingall, J. M. ; Morris, B. J. ; Leopold, D. J. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 59 (1986), S. 3571-3573

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A systematic study has been made of silicon dopant compensation in GaAs grown by molecular-beam epitaxy. The compensation ratio is derived from Hall measurements for a number of samples grown under identical conditions except for silicon dopant flux. Results are compared with low-temperature (4.2 K) photoluminescence measurements. The donor and acceptor concentrations are both related to the silicon effusion cell temperature by Arrhenius relations; however, each is fitted with a different activation energy. This leads to increasing compensation with increasing dopant flux.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.336780

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