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    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 278-285 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present data obtained on a set of symmetric GaAs/AlGaAs double-barrier quantum-well structures in which the thickness of the AlGaAs barriers has been systematically varied from 31 to 7.5 nm. Low-temperature I(V ) characteristics, temperature dependencies, and magnetotunneling have been investigated. Our data suggest a dominance of sequential tunneling processes in the range investigated and point to interface roughness in the well as the possible cause for the large valley currents. Our best devices exhibit a current peak-to-valley ratio of about 20.
    Type of Medium: Electronic Resource
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