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Metalorganic chemical vapor deposition of (ZnO)x(SiO2)1−x films (1989)

Lawrence, David J. ; Lee, S.Tong ; Blanton, Thomas N.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 66 (1989), S. 885-890

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The metalorganic chemical vapor deposition of (ZnO)x(SiO2)1−x films in the temperature range 300–450 °C is described. The deposition system is similar to those commonly used to deposit SiO2 and silicate glass films at atmospheric pressure. The source gases are dimethylzinc, silane, and oxygen. Rutherford backscattering spectrometry and x-ray diffraction have been used to characterize the films. The dependence of the film composition on the source gas composition is given. The films appear amorphous to the thin-film diffractometer for x〈0.8. The ultraviolet absorption edge of (ZnO)x(SiO2)1−x varies continuously with the solid composition from x=0 (SiO2 ) to x=1 (ZnO).

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.343515

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