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Hot-phonon and electron-hole scattering effects on the transient transport of photogenerated electrons in GaAs (1989)

Joshi, R. P. ; Grondin, R. O.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 66 (1989), S. 4288-4294

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We investigate the transient response of photogenerated carriers to an external electric field in bulk GaAs. The results of our Monte Carlo simulations indicate that the initial velocity rise times are a strong function of the carrier density. This is caused by a combination of the hot-phonon effect and the enhanced electron-hole scattering within the plasma. Contrary to some previous suggestions, the hot-phonon effect alone is insufficient to explain the initial velocity behavior seen experimentally. The steady-state velocity is limited by the electron-hole scattering.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.343973

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