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Tunneling through asymmetric double-barrier quantum-well heterostructures (1990)

Rossel, C. ; Guéret, P. ; Meier, H. P.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 67 (1990), S. 900-903

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Data obtained from a set of asymmetric GaAs/AlGaAs double-barrier resonant tunneling structures is presented. Low-temperature I(V) characteristics, temperature dependencies, and magnetotunneling have been investigated. The data confirm conclusions drawn in previous studies on symmetric structures, lending further support to the description of tunneling in terms of sequential processes and momentum randomization most likely induced by interface roughness scattering in the well.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.345750

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