ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

High-quality p-type HgCdTe grown by molecular beam epitaxy (1990)

Wijewarnasuriya, P. S. ; Boukerche, M. ; Faurie, J. P.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 67 (1990), S. 859-862

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The galvanomagnetic transport in (111)B HgCdTe p-type layers, grown by molecular beam epitaxy, was studied as a function of temperature and magnetic field strength. Experimental data on the Hall coefficient and conductivity tensor versus magnetic field have been analyzed with the assumption of three charge carriers involved in the conduction mechanism: one carrier coming from the conduction band and the other two from the complex nature of the valence band. Indeed, two kinds of positive charge carriers with completely different mobilities in the extrinsic region are seen. The extracted parameters are in very good agreement with the intrinsic concentration over a wide temperature range.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.345743

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit