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Hole drift mobility in organopolysilane doped with trap-forming organic compounds (1990)

Yokoyama, Kenji ; Yokoyama, Masaaki

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 67 (1990), S. 2974-2979

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The carrier transport in poly(phenylmethylsilane) films doped with trap-forming organic compounds with different ionization potentials has been investigated. The carrier transport in the doped systems is discussed as trapping events in the transport-active host polymer. Zero-field activation energy E0 corresponds well to the ionization potential difference between the additives and host polymer. The field and temperature dependencies of the mobilities have been analyzed in the framework of Gill's [W. D. Gill, J. Appl. Phys. 43, 5033 (1972)] expression. Its characteristic parameter T0, at which the field dependence disappears, has been found to depend on trap depth and concentration, and an explicit expression interrelating them has been experimentally derived.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.345418

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