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Minority-carrier lifetime in p-type (111)B HgCdTe grown by molecular-beam epitaxy (1990)

de Souza, M. E. ; Boukerche, M. ; Faurie, J. P.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 68 (1990), S. 5195-5199

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Measurements of electron lifetime have been carried out on unintentionally doped layers of (111)B Hg1−xCdxTe (0.216〈x〈0.320), p-type as-grown by molecular-beam epitaxy. The temperature dependence of the bulk lifetime is explained in terms of the Shockley–Read recombination mechanism for the extrinsic region. The samples have shown a deep level close to midgap. The surface recombination seen in two of the samples is accounted for. Some samples show clearly Auger-limited recombination at high temperatures. From the values of τn0 and τp0 of two samples the trap level appears to have a donorlike character.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.347061

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