Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
68 (1990), S. 6447-6452
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
The influence of the insulating layer and illumination on the threshold switching voltage (Vs) of metal-thin insulator-semiconductor-semiconductor (MISS) devices has been modeled using the phenomenological approach we developed previously. [J. Appl. Phys. 65, 2102 (1989)]. The influence of the thin insulating layer on Vs has been examined by investigating the influence of the effective barrier heights of the insulating layer on the current amplification factor of the metal-thin insulator-semiconductor part of the model. The influence of illumination is modeled in a similar way to the effect of base current injection in three-terminal devices; the base current is replaced by the photocurrent generated as a result of illumination. Our model provides good agreement for MISS devices with silicon oxide insulating layers and illumination of fixed wavelength.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.346842
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