Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
69 (1991), S. 3011-3015
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A simple and reproducible process for the open-tube diffusion of zinc from (ZnO)x(SiO2)1−x source films into GaAs, Al0.2Ga0.8As and GaAs0.6P0.4 is reported. (ZnO)x(SiO2)1−x films were deposited onto compound semiconductor substrates by metalorganic chemical vapor deposition. A capping layer of SiO2 was deposited on top of the source films. The diffusions were performed in flowing nitrogen at 650 °C. Diffusion depths from 0.2 μm to several micrometers were readily achieved. The diffusion front in n-type substrates is abrupt and the average hole concentration for diffused layers in GaAs is approximately 8 × 1019/cm3. The dependence of the diffusion depth on the source film composition (x=0.04–x=1.00) is presented. The dependence of the diffusion depth on the source film thickness and the SiO2 cap layer thickness is also reported.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.348587
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