ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Effect of (NH4)2Sx treatment on the passivation of GaP surface (1991)

Lee, Jong-Lam ; Wei, Long ; Tanigawa, Shoichiro ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 70 (1991), S. 2877-2879

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We applied slow positrons to both as-etched GaP and (NH4)2Sx-treated GaP. The results show that the surface of as-etched GaP is active for the adsorption of oxygen atoms when the etched surface was exposed to air for several minutes before the measurement. On the other hand, the monolayer of chemisorbed sulfur in (NH4)2Sx-treated GaP is effective to protect the clean surface from the adsorption of the oxygen atoms. The mean diffusion length of positrons in the etched GaP is shorter than that in (NH4)2Sx-treated GaP. This suggests that the centers for the positron trapping, such as Ga vacancies VGa and/or VGa-related complexes, are created by the adsorption of oxygen atoms.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.349354

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit