ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have used in situ resistance versus temperature measurements to demonstrate that a 60 nm titanium thin film on polycrystalline silicon heated at rates up to 3000 °C/min always forms high-resistivity base-centered orthorhombic C49-TiSi2 before the low-resistivity face-centered orthorhombic C54-TiSi2 phase. Kinetic analysis of the shift in transformation temperatures with heating rate indicates that the activation energies for the formation of C49-TiSi2 and C54-TiSi2 are 2.1±0.2 and 3.8±0.5 eV, respectively, when formed during the same annealing cycle. The higher activation energy of formation of C54-TiSi2 as compared to C49-TiSi2 suggests that under very high heating rates and annealing temperatures, the formation of C49-TiSi2 before C54-TiSi2 might be completely or partially bypassed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.352018
