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Defect characterization in GaAlInAs alloys (1992)

Nubile, P. ; Zazoui, M. ; Bourgoin, J. C. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 72 (1992), S. 3530-3534

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Deep level transient spectroscopy (DLTS) and capacitance-voltage measurements at various temperatures have been used to characterize defects in Si-doped (Ga1−xAlx)1−yInyAs materials for x=0.3 and different values of y (0, 0.005, and 0.07). We only detect DX centers, those associated with the doping impurity (Si), but also others associated with Te and, eventually, Sn not introduced intentionally. When the experimental conditions are chosen to obtain exponential transients, the shape of the DLTS spectrum and its variation with the filling pulse duration can be accounted for by this contamination; i.e., no sign of the so-called alloying effect is detected.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.351431

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