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Tungsten deposition on GaAs using WF6 and atomic hydrogen (1993)

van Maaren, A. J. P. ; Sinke, W. C.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 73 (1993), S. 1989-1992

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Tungsten was deposited on GaAs employing WF6 as precursor gas. A comparison is made between molecular and atomic hydrogen as reducing agent. Atomic hydrogen is produced in situ by dissociating molecular hydrogen on a hot (2100 °C) filament. Tungsten deposition was not observed only when molecular hydrogen and the substrate were available as reducing agents. Introduction of atomic hydrogen did lead to W deposition on GaAs.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.353164

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