ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Evidence of silicon interdiffusion in selectively doped GaAs-AlAs superlattices by Hall measurements (1993)

Sellitto, P. ; Jeanjean, P. ; Sicart, J. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 74 (1993), S. 7166-7172

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Hall and photo-Hall measurements have been performed on GaAs-AlAs short-period superlattices selectively doped with silicon. The dopant was introduced selectively in either the GaAs or AlAs layers or at the interface. A superlattice doped uniformly in both layers was investigated for comparison. The electrical properties were controlled by DX deep donors lying in the gap of the superlattice. Hall data are interpreted with a model taking into account the existence of two DX deep donors and a shallow donor both related to the silicon impurity. It is found that the silicon donor state in AlAs lies 60 meV below the silicon donor state in GaAs. The ionization energies of the DX states in GaAs and AlAs are computed to account for the experimental results. Interpretation of Hall data in selectively doped samples needs to assume segregation of silicon atoms during epitaxy.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.355033

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit