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Room temperature carrier recombination in InGaAs/GaAs quantum wells (1993)

Marcinkevicius, S. ; Olin, U. ; Treideris, G.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 74 (1993), S. 3587-3589

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Room temperature recombination in InGaAs/GaAs single quantum wells has been studied by steady-state photoluminescence. Nonradiative recombination has been determined to be the prevailing recombination process. It occurs via the thermal carrier activation out of the well, followed by recombination in the barriers. The temperature dependence of the quantum well photoluminescence peak energy allows us to conclude that the main mechanism of radiative recombination at room temperature is of band-to-band origin.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.354540

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