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Observation of surface charge screening and Fermi level pinning on a synthetic, boron-doped diamond (1993)

Baker, Shenda M. ; Rossman, George R. ; Baldeschwieler, John D.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 74 (1993), S. 4015-4019

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Spectroscopic current-voltage (I-V) curves taken with a scanning tunneling microscope on a synthetic, boron-doped diamond single crystal indicate that the diamond, boiled in acid and baked to 500 °C in vacuum, does not exhibit ideal Schottky characteristics. These I-V curves taken in ultrahigh vacuum do not fit the traditional theory of thermionic emission; however, the deviation from ideal can be accounted for by charge screening at the diamond surface. At ambient pressure, the I-V curves have a sharp threshold voltage at 1.7 eV above the valence band edge indicating pinning of the Fermi energy. This measurement is in excellent agreement with the 1/3 band gap rule of Mead and Spitzer [Phys. Rev. 134, A713 (1964)].

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.354445

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