Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
75 (1994), S. 5186-5190
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new method for calculating free carrier energy quantization in the depletion region is proposed and applied to investigate the influence of this phenomenon on the metal-oxide-semiconductor transistor threshold voltage. This influence is significant when the semiconductor surface region is highly doped. Other phenomena essential for high doping levels such as the energy degeneration, the incomplete ionization of dopants, and the band-gap narrowing are taken into account.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.355766
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