ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The effect of an electric field on GMR oxide films was studied in a MOSFET configuration where the gate dielectric was a layer of SrTiO3 epitaxially grown on an underlying layer of the manganate which served as the source/drain. The response of the manganate channel was studied for different gate voltages. The following significant features were observed. The peak resistance temperature shifted to lower temperature for both polarities of the field. The resistance change varied quadratically with the field indicating the dominance of strain or polarization effects. In dynamical studies of the system using the gate voltage as an excitation the system showed anomalous slowing down near the peak of the resistivity. These results are understood on the basis of a stress effect on the film due to electro-elastic effects in the SrTiO3 layer, which introduces a tensile stress in the manganate layer upon the application of a gate voltage. The anomalous slowing down of the system near the ferromagnetic phase transition suggests a strong coupling between the spins, transport and structural distortions in the system. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.361718
