ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present gain and spontaneous emission measurements in In0.35Ga0.65As/GaAs multiple quantum well lasers. First, the gain is extracted from measured amplified spontaneous emission through a laser facet. Second, unamplified spontaneous emission is detected through the transparent GaAs-substrate. Taking advantage of the fundamental relationship between gain and spontaneous emission, the separation of the electron and hole quasi-Fermi levels, ΔEF, at various bias currents below laser threshold is accurately determined. Theoretically, ΔEF is calculated utilizing a simple two-subband structure model. Fitting the theoretical predictions to the experimental data allows us to determine the threshold carrier density (nth=2.0×1018 cm−3), the in-plane hole effective mass (mv1=0.21m0), and the amount of band gap shrinkage at threshold (ΔEg,th=33 meV). © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.362721
