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Intermixing-induced resonance shift in GaAs/AlxOy distributed Bragg resonators (1999)

Cohen, M. I. ; Tan, H. H. ; Jagadish, C.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 85 (1999), S. 7964-7966

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The effect of ion implantation-induced interdiffusion on the resonant wavelength of GaAs/AlxOy distributed Bragg reflectors is investigated. As interdiffusion becomes stronger, the resonant wavelength is seen to redshift. Shifts of more than 60 nm could be achieved for center wavelengths around 800 nm. A model is proposed to explain this behavior. This model agrees well with previous lateral oxidation studies. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.370616

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