Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
85 (1999), S. 1192-1195
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Low frequency noise in polysilicon emitter bipolar transistors (BJT) with different emitter areas (AE) was studied. In BJTs with submicron emitter area, random telegraph signals of different amplitudes and frequencies were found. Averaging of noise spectra from different submicron BJTs gives 1/f noise of the same level (normalized to the emitter area) as 1/f noise found in transistors with large emitter areas. The sheet density of traps (NT) located within the polysilicon–crystalline silicon interfacial layer and responsible for 1/f noise was estimated to be ≥3×108 cm−2. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.369256
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