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Low-dose radiation effects in extrinsic photoconductors (1999)

Patrashin, M. ; Hiromoto, N.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 3797-3803

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Experimental results and a model describing long-term radiation-induced changes in extrinsic photoconductors are presented. Experiments, carried out at low temperatures and low photon backgrounds, simulated typical operating conditions of extrinsic infrared detectors used in space- based platforms and instruments. The observed changes in the carrier lifetime and current–voltage characteristics at a low electric field, as well as a long-term relaxation of the effects after removal of the irradiation are related to a recharging of the impurities in the bulk during the irradiation. The proposed model agrees well with experimental data and despite its simplicity, provides relevant information on how to deal with these effects in practical applications. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.371290

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