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Optical properties of the bulk amorphous semiconductor ZnIn2Te4 (1999)

Matsumoto, Yasuyuki ; Ozaki, Shunji ; Adachi, Sadao

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 3705-3708

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The bulk amorphous-like (a-) semiconductor, a-ZnIn2Te4, is prepared by the melt-quench technique. The pseudodielectric-function spectra, 〈ε(E)〉=〈ε1(E)〉+i〈ε2(E)〉, of a-ZnIn2Te4 are measured by spectroscopic ellipsometry in the 1.2–5.3 eV photon-energy range at room temperature. The measured 〈ε(E)〉 spectra strongly resemble those of amorphous tetrahedrally bonded semiconductors. These spectra are analyzed using a simplified model of the interband optical transitions. Dielectric-related optical constants, such as the complex refractive index, absorption coefficient, and normal-incidence reflectivity, of a-ZnIn2Te4 are also been presented. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.371282

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