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Lattice relaxation and metastability of the EL2 defect in semi-insulating GaAs and low temperature GaAs (2000)

Kowalski, G. ; Collins, S. P. ; Moore, M.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 87 (2000), S. 3663-3668

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Using the two-dimensional reciprocal space mapping, we have clearly established the relative positions of the arsenic atom (EL2 defect) corresponding to its stable and metastable configurations. It is shown that lowering only the temperature of the sample, before transition, induces transformation of the lattice. Characteristic temperature (120–140 K) below which such transformation takes place is the same as for thermal recovery of the defect. It is suggested that this temperature related lattice relaxation might promote a further transition to the metastable state. Full reciprocal space maps of the x-ray diffracted intensity are shown for the whole substrate-layer system. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.372396

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