Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
89 (2001), S. 7561-7563
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present a nonequilibrium band-structure calculation of a magnetic tunnel junction using the ab initio screened Korringa–Kohn–Rostoker multiple scattering formalism together with the local spin density approximation. We find that the current is determined by the surface density of states (DOS) and the bias dependence of the barrier in our Fe(100)/vacuum(30 Å)/Fe(100) model junction. The existence of quasilocalized states at the interfaces leads to the effect of negative differential resistance at low bias. For high bias the surface DOS yields an enhanced spin polarization of the current. Therefore, the magnetoresistance ratio becomes strongly quenched since the current is dominated by the minority channel for both the parallel and the antiparallel configuration of the magnetic electrodes. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1357861
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