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Field dependence of thermally stimulated currents in Alq3 (2001)

Werner, A. G. ; Blochwitz, J. ; Pfeiffer, M. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 90 (2001), S. 123-125

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The trap properties of the commonly used organic light-emitting diode emitter material tris-8-(hydroxyquinoline) aluminum (Alq3) have been investigated using thermally stimulated currents. Based on a model of the field dependence of the thermally stimulated currents, a trap density of 1.3×1017 cm−3 for depths ranging from 0.05 to 0.7 eV is obtained, indicating considerable influence on charge carrier statistics. A field-induced lowering of trap depth was observed and explained in the framework of the Poole–Frenkel effect. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1378813

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