Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
90 (2001), S. 1179-1187
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
One- and two-detector Doppler broadening measurements performed on low (∼1014 to 1015 O+/cm2) and high dose (∼1017 to 1018 O+/cm2) oxygen-irradiated Si using variable-energy slow positrons are analyzed in terms of S and W parameters. After annealing the low-dose samples at 800 °C, large VxOy complexes are formed at depths around 400 nm. These complexes produce a clear-cut signature when the ratio of S to that of defect-free bulk Si is plotted. Similar behavior is found for samples irradiated with 2 and 4×1017 O+/cm2 and annealed at 1000 °C. After irradiation with 1.7×1018 O+/cm2 and anneal at 1350 °C a 170 nm thick almost-bulk-quality Si surface layer is formed on top of a 430 nm thick buried oxide layer. This method of preparation is called separation by implantation of oxygen. S−W measurements show that the surface layer contains electrically inactive VxOy complexes not seen by electron microscopy. A method is presented to decompose the Doppler broadening line shape into contributions of the bulk, surface, and defect. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1380411
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