Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
92 (2002), S. 1718-1720
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A SiGe/Si multiple-quantum-well resonant-cavity-enhanced (RCE) photodetector for 1.3 μm operation was fabricated using bonding reflector process. A full width at half maximum (FWHM) of 6 nm and a quantum efficiency of 4.2% at 1314 nm were obtained. Compared to our previously reported SiGe RCE photodetectors fabricated on separation-by-implanted-oxygen wafer, the mirrors in the device can be more easily fabricated and the device can be further optimized. The FWHM is expected to be less than 1 nm and the detector is fit for density wavelength division multiplexing applications. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1492868
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