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Low-threshold gain-guided coupled-stripe quantum well diode lasers by laser-assisted processing (1987)

Epler, J. E. ; Burnham, R. D. ; Paoli, T. L.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 51 (1987), S. 558-560

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The first coupled-stripe laser diodes fabricated by a laser-assisted process are reported. In this process, a focused laser beam is scanned across AlGaAs-GaAs heterostructure material to pattern a shallow resistive region in the GaAs cap layer. In this manner, the distribution of the injected current is patterned to fabricate gain-guided four-stripe diode lasers. The devices operate continuously (cw) at room temperature with a low threshold current (36 mA) and high differential quantum efficiency (80%). A maximum cw power efficiency of 48% is obtained at 350 mA. The gain-guided structure favors the lower order array modes, thus the far-field pattern is dominated by a central lobe.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.98346

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