Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 1838-1840
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new physical phenomenon causing oxidation of silicon has been observed. The phenomenon is controlled by the impact of an energetic ion beam on a clean silicon target exposed to low-pressure oxygen. An oxide layer of 50–100 A(ring) can be formed at room temperature by properly choosing the oxidation conditions. The growth was studied in situ by measuring the ion-induced secondary electron yield. A strong dependence on oxygen pressure and target temperature was observed. By studying the oxide with x-ray photoelectron spectroscopy, it was concluded that the film formed is stoichiometric SiO2 . A discussion on possible growth mechanisms is carried out in terms of ion energy deposition.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100370
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