Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 2232-2234
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The orientation of YBa2Cu3O7−x thin films grown on (110) planes of SrTiO3 by activated reactive evaporation was investigated by means of reflection high-energy electron diffraction. The orientation of the films depended on the substrate temperature. The films with (110) planes parallel to the substrate surface grew in a narrow range of substrate temperatures around 530 °C, while the films with (103) planes parallel to the surface grew at temperatures above 600 °C. The change of the epitaxial orientation with the substrate temperature is discussed in terms of the temperature dependence of the lattice mismatch between YBa2Cu3O7−x and SrTiO3.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100511
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