ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
High-purity Si-doped molecular beam epitaxy (MBE) GaAs layers grown with and without the intentional introduction of CO gas have been characterized by Hall effect measurements, photoluminescence, and photothermal ionization spectroscopy. The results indicate that CO itself is not the source of residual C acceptor impurities in MBE GaAs samples. The observations of the correlation of residual C impurity incorporation with the residual CO gas in the MBE growth chamber suggest that the partial pressure of CO, PCO , gives a quantitative indication of background levels of hydrocarbons which are the source of C acceptors.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100410