Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 2664-2665
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The GaAs-Al-GaAs structure is grown using migration-enhanced epitaxy (MEE) method at low temperature on a molecular beam epitaxy machine. With MEE the interdiffusion between Al and GaAs is reduced by a large amount, and the morphology is improved by a large degree. Still, Raman spectrum indicates poor crystallinity for the GaAs of the top layer. The effect of different annealing temperatures on the interdiffusion is also studied.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100188
|
Location |
Call Number |
Expected |
Availability |