Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 1265-1267
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We describe a convenient method utilizing chemical reduction of SiO2 by Al (from AlxGa1−xAs) to generate Si and O for impurity-induced layer disordering (IILD) of AlxGa1−xAs-GaAs quantum well heterostructures (QWHs). Experimental data show that Si-O diffusion (from SiO2) is an effective source of Si for Si-IILD and of O that compensates the Si donor, thus resulting in higher resistivity layer-disordered crystal. The usefulness of the Si-O IILD source for fabricating low-threshold disorder-defined buried-heterostructure AlxGa1−xAs-GaAs QWH lasers is demonstrated.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100734
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