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Resonant Raman scattering of In+-implanted CdTe and Cd0.23Hg0.77Te (1989)

Lusson, A. ; Wagner, J. ; Ramsteiner, M.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 54 (1989), S. 1787-1789

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: In+ -implanted CdTe and Cd0.23 Hg0.77 Te have been studied by resonant Raman scattering. Dipole-forbidden but defect-induced scattering by one longitudinal optical (LO) phonon as well as Fröhlich-induced two-LO phonon scattering is strongly affected by implantation of 350 keV In+ with doses ranging from 1011 to 5×1014 ions/cm2 . The intensity ratio of the one-LO and the two-LO phonon lines is found to be a measure of the implantation damage in CdTe and in the alloy Cd0.23 Hg0.77 Te. The observed implantation effects on resonant Raman scattering by LO phonons are due to a broadening and an energy shift of the corresponding resonances as demonstrated for the E0 +Δ0 gap resonance in CdTe.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.101295

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