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Ion channeling analysis of a Si1−xGex(As)/Si strained layer (1989)

Moore, J. A. ; Lennard, W. N. ; Massoumi, G. R. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 54 (1989), S. 2571-2573

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A strained layer of Si1−x Gex (As)/Si has been grown by molecular beam epitaxy (MBE) with the As dopant introduced by 1 keV ion implantation during growth. Analysis of the layer was made using secondary-ion mass spectrometry (SIMS), Rutherford backscattering (RBS), and proton-induced x-ray emission (PIXE)/channeling, using 2 MeV H+ ions. The layer thickness (∼1.4 μm) and composition (x∼0.015; nAs ∼6×1018 cm−3) measurements by SIMS, RBS, and PIXE were in agreement. RBS, PIXE/channeling showed that the crystalline quality of the strained layer was equivalent to that of the Si substrate. The substitutional fraction (∼0.75) of the As dopant was determined by PIXE/channeling.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.101364

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