Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 2097-2099
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Raman spectroscopy is used as a probe of the state of amorphous Si (a-Si) and damaged crystalline Si. MeV ion beams have been used to irradiate structurally relaxed a-Si. When the density of Si atoms displaced by nuclear collisions exceeds 5%, the a-Si is "de-relaxed'', and thus returns to its as-implanted state. This behavior is an indication that point defect complexes exist in a-Si and play an important role in the process of structural relaxation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102984
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