Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 1071-1073
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The first stages of the chemical vapor deposition of SiO2 on chemically polished InP substrates, promoted by UV illumination at room temperature and low (≈0.01 Torr) precursor pressure, have been studied in an ultrahigh vacuum environment. Chemical species deposited are found to be quite similar to those deposited by the thermally promoted process. Both Si and O atom depositions need UV illumination. The reaction rates observed in separate or mixed gas exposures indicate that surface-located mechanisms play a major part in the buildup of the SiO2/InP interface at low precursor pressure, thus opening perspectives for localized insulator growth under the UV beam.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104374
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