Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 729-731
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Following heat treatments of Pt encapsulated Ni80Cr20 thin films on silicon substrates at temperatures ranging from 300 to 500 °C, it has been discovered that Cr atoms segregate at the original NiCr/Si interface to form an amorphous layer, while Ni atoms diffuse into the Si to form Ni silicide. The Cr-rich amorphous layer acts as a "semipermeable membrane'' which selectively passes Ni to form a very uniform NiSi layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104529
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