ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy (1991)

Okumura, H. ; Misawa, S. ; Yoshida, S.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 59 (1991), S. 1058-1060

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: GaN epilayers were grown on GaAs substrates by gas-source molecular-beam-epitaxy technique using dimethylhydrazine as a nitrogen source. It was found that cubic GaN grows on GaAs (001) surfaces epitaxially, while hexagonal GaN grows on GaAs (111) surfaces, from the analyses of x-ray diffraction and reflection high-energy electron diffraction patterns. Cathodoluminescence measurements suggested that the band-gap energy of cubic GaN is around 0.37 eV larger than that of hexagonal GaN.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.106344

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit