Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 480-482
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The electrical characteristics of a metal-intrinsic semiconductor-semiconductor structure formed by Al-undoped polycrystalline diamond-B-doped polycrystalline diamond were investigated. Boron-doped diamond films containing B-to-C ratios of 400 and 4000 ppm in gas phase were deposited on (111)-oriented B-doped Si substrates. Subsequently, undoped diamond layers were deposited on the B-doped diamond films for 60 min. The existence of a bilayer structure in terms of the atomic B concentration was confirmed by a secondary-ion mass spectroscopy. Significant improvements in the rectifying characteristics could be obtained with the introduction of an undoped diamond layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106642
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